| PART |
Description |
Maker |
| S40D60 S40D30 S40D40 S40D50 |
SCHOTTKY BARRIER RECTIFIERS(40A/30-60V)
SCHOTTKY BARRIER RECTIFIERS(40A,30-60V) 肖特基（0A ,30 - 60V的）
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| STD40NF06 STD40NF06T4 |
N-CHANNEL 60V - 0.024 OHM - 40A DPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET⑩ II POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| ADP1173AN-12 ADP1173AN-33 ADP1173AR-33 ADP1173 ADP |
Micropower DC-DC Converter
RECTIFIER SCHOTTKY SINGLE 1A 80V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO 1.5 A SWITCHING REGULATOR, 32 kHz SWITCHING FREQ-MAX, PDIP8
RECTIFIER SCHOTTKY DUAL 40A 60V 375A-ifsm 0.7V-vf 1mA-ir TO-3P 30/TUBE
RECTIFIER SCHOTTKY SINGLE 1A 90V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/REEL-13
|
http://
Analog Devices, Inc.
|
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
| 36-00029-01-D1 36-00029-01 |
IND COMMON MODE 350uH 40A 实业共模350uH 40A
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| PA50 |
Amplifiers - Apex Linear Op-Amp, 100V, 40A OP-AMP, 10000 uV OFFSET-MAX, 3 MHz BAND WIDTH, MDFM12
|
Cirrus Logic, Inc.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 2SJ600 2SJ600-Z |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3
|
NEC
|
| 2SJ601 2SJ601-Z |
Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z)
|
NEC
|
| RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| BP40-01 BP40-005 BP40-04 BP40-06 BP40-02 BP40-08 B |
40A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| PU4120 PU4120P PU4120Q |
V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array
(PU4120 / PU4420) SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE
|
Panasonic Semiconductor
|
