Part Number Hot Search : 
7139A Z047B 80N03 SUB610 MMBD1404 Z047B TMP86F 020BC
Product Description
Full Text Search

RJK03N1DPA - 30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching

RJK03N1DPA_8213652.PDF Datasheet


 Full text search : 30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching


 Related Part Number
PART Description Maker
RJK03N3DPA 30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics Corporation
STD45NF03L 6770 From old datasheet system
N - CHANNEL 30V - 0.011 ohm - 45A DPAK STripFET POWER MOSFET
STMICROELECTRONICS[STMicroelectronics]
IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
International Rectifier, Corp.
IRF[International Rectifier]
X9119TV14 X9119TV14-2.7 X9119TV14I X9119TV14I-2.7 IGBT MODULE, 1200V, 54A; Transistor type:IGBT4; Current, Ic continuous a max:56A; Voltage, Vce sat max:2.05V; Case style:MiniSkiiP 2 ; Current, Ic continuous b max:45A; Time, rise:35ns; Voltage, Vce sat typ:1.85V; Voltage, RoHS Compliant: Yes
Single Supply/Low Power/1024-Tap/2-Wire Bus
INTERSIL[Intersil Corporation]
RJK0455DPB RJK0455DPB13 RJK0455DPB-00-J5 40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
IRFR3709ZPBF IRFU3709ZPBF IRFR3709ZTRR IRFR3709ZTR 30 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mヘ , Qg = 17nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mΩ , Qg = 17nC )
High Frequency Synchronous Buck Converters for Computer Processor Power
International Rectifier
IRF7831PBF IRF7831TRPBF IRF7831PBF-15 Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
High Frequency Point-of-Load Synchronous Buck Converter
International Rectifier
DTD743ZE DTD743ZM 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
Rohm
DTB723YE DTB723YE09 DTB723YM -200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
Rohm
DTD723YM DTD723YE 200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
Rohm
 
 Related keyword From Full Text Search System
RJK03N1DPA poliester RJK03N1DPA analog RJK03N1DPA package RJK03N1DPA power RJK03N1DPA 0pam
RJK03N1DPA quad RJK03N1DPA mosi program RJK03N1DPA Marin RJK03N1DPA MARKING RJK03N1DPA asm encoder
 

 

Price & Availability of RJK03N1DPA

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.70423007011414