| PART |
Description |
Maker |
| ASC-3.3S ASC-12S |
30W Ul t raminiature Modular Swi tching Power Suppl ies
|
Astrodyne Corporation
|
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR
HIGH POWER NPN TRANSISTOR
From old datasheet system
HIGH VOLTAGE NPN POWER TRANSISTOR
8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APT100GF60JRD |
The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT & FRED 600V 140A
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| HD1760JL |
High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display
High Voltage NPN Power Transistor For High Definition CRT Displays
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics, Inc.
|
| BUL76A |
POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
Seme LAB
|
| BUXD87 BUXD87DPAK BUXD87IPAK BUXD87T BUXD87T4 |
HIGH VOLTAGE NPN POWER TRANSISTOR 高压NPN电源晶体
HIGH VOLTAGE SILICON POWER TRANSISTOR
HIGH VOLTAGE SILICON POWER TRANSISTOR
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| BUX45 |
HIGH VOLTAGE HIGH POWER SILICON NPN POWER SWITCHING TRANSISTORS
|
General Electric Solid State
ETC[ETC]
List of Unclassifed Manufacturers
|
