| PART |
Description |
Maker |
| F10P20F |
Latest GPP technology with super fast recovery time
|
Thinki Semiconductor Co...
|
| SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
| GBU6J GBU6J-BP GBU6A-BP GBU6D-BP GBU6M-BP GBU6B-BP |
6 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 6A 600V GBU 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 6A 800V GBU 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| PIC18F2685-I/ML PIC18LF2685-I/SO PIC18F2685-I/P PI |
28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology
|
Microchip Technology
|
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
1A GENERAL PURPOSE GPP DIODES
|
LRC[Leshan Radio Company]
|
| PIC18F2680TEPSQTP PIC18F4584ESOQTP PIC18F4584ESPSQ |
PIC18F2585/2680/4585/4680 Data Sheet
28/40/44-Pin Enhanced Flash Microcontrollers with ECAN?Technology, 10-Bit A/D and nanoWatt Technology
|
Microchip Technology
|
| RC30S10G RC30S01G RC30S02G RC30S04G RC30S06G RC30S |
CANCA06COME32A10S
SILICON GPP CELL RECTIFIER
|
Shanghai Sunrise Electronics Co., LTD.
SSE[Shanghai Sunrise Electronics]
|
| 1N5394G 1N5398G 1N5399G 1N5391G 1N5392G 1N5393G 1N |
1.5A GENERAL PURPOSE GPP DIODES 1.5A的一般用途玻璃钝化二极管
|
Leshan Radio Company, Ltd.
乐山无线电股份有限公
LRC[Leshan Radio Company]
|
| P6KE P6KE-10 P6KE-100 P6KE-100A P6KE-10A P6KE-200 |
6.8V to 200V GPP TRANSIENT VOLTAGE SUPPRESSORS
|
First Components International
|
| 15KE350 15KE400 15KE 15KE91A 15KE10 15KE100 15KE10 |
GPP TRANSIENT VOLTAGE SUPPRESSOR
WS 5-10
VC-K-T2-Z-M25 玻璃钝化瞬态电压抑制器
|
http://
RECTRON[Rectron Semiconductor]
|
| 150UR120 |
150 Amp GPP PASSIVATED STUD POWER DIODE
|
First Components Intern...
|
