PART |
Description |
Maker |
2N4211 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | TO-210AE
|
|
FL75L20A-12 |
Delphi Series Filter Module - FL75L20 75Vdc max input, 20A max output current
|
Delta Electronics, Inc.
|
RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK1054DPB-00-J5 |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器 Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes Silicon Piezoresistive Relative Pressure Sensor Silicon Piezoresistive Relative Press...
|
Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
IRFP460A IRFP460APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=500V Rds(on)max=0.27ohm Id=20A) Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)最大值\u003d 0.27ohm,身份证\u003d 20A条)
|
IXYS Corporation IRF[International Rectifier] International Rectifier, Corp.
|
0923161023 92316-1023 |
Picoflex? PF-50 IDT-Board In, 10 Circuits, 0.23m (9.06) Length
|
Molex Electronics Ltd.
|
RJK0657DPA RJK0657DPA-00-J5A |
60V, 20A, 13.6m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SB920 2SB920L 2SD1236L |
80V/5A Switching Applications 80V/5A开关应
|
Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
|
T308N20TOC |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Eupec Power Semiconductors
|
STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns; SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|