| PART |
Description |
Maker |
| IRFP460APBF |
SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27Ω , ID=20A )
SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27ヘ , ID=20A )
|
International Rectifier
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| D44VH10 D44VH-D D45VH D45VH10 |
Power 15A 80V NPN
Complementary Silicon Power Transistors
Power 15A 80V PNP
|
ON Semiconductor
|
| EMH1303-TL-E |
P-Channel Power MOSFET 12V, ?A, 23m, Single EMH8
|
ON Semiconductor
|
| CDSV3-217-HF |
Halogen Free Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
|
Comchip Technology
|
| EL240A5-12 EL240A5-24 EL240A5-05 EL240A20-24 EL240 |
Ratings of 5A, 10A and 20A @ 24-280 VAC
TRIGGER OUTPUT SOLID STATE RELAY, 3750 V ISOLATION-MAX ROHS COMPLIANT PACKAGE-4
|
Crydom Inc.,
Crydom, Inc.
CRYDOM CORP
|
| 164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 120伏特五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五（巴西）总裁|甲一（c）| STR-5/16
|
Ecliptek, Corp.
|
| FME-220A |
Schottky Barrier Diode - 90V/100V
100V, 20A Schottky barrier diode in TO220F package
100V/ 20A Schottky barrier diode in TO220F package
100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
| STB20PF75 STB20PF75T4 |
P-CHANNEL 75V - 0.10 OHM - 20A DPAK STripFET™II POWER MOSFET
P-CHANNEL 75V - 0.10 ?- 20A D2PAK STripFET II POWER MOSFET
P-CHANNEL 75V - 0.10 з - 20A D?PAK STripFETII POWER MOSFET P通道75V 0.10з - 20A?巴基斯STripFET⑩二功率MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| SB20-18 |
Schottky Barrier Diode (Twin Type Cathode Common) 80V, 2A Rectifier
80V/ 2A Rectifier
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 4A条一（c）| TO - 220AB现有
POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
