| PART |
Description |
Maker |
| RFP2N10L RFP2N08L FN2872 |
From old datasheet system
2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| IRF510 IRF511 IRF512 IRF513 |
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
|
Harris Corporation
|
| RFP8P08 RFP8P10 RFM8P10 RFM8P08 |
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
|
HARRIS[Harris Corporation]
|
| RFK25P08 RFH25P08 RFH25P10 |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| HUF75645P3 HUF75645S3S HUF75645P3NL HUF75645S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 75A条（丁）|63AB
75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR,MOSFET
75A, 100V, 0.014 Ohm, N-Channel, UltraFETPower MOSFETs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| HUF75531SK8 FN4848 |
6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET 6 A, 80 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
6A/ 80V/ 0.030 Ohm/ N-Channel/ UltraFET Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL91 |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| CDSUR4448-HF |
Halogen Free Switching Diodes, V-RRM=100V, V-R=80V, P-D=200mW, I-F=125mA
|
Comchip Technology
|
| JANSR2N7405 FN4375 |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
|
