| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
| BC847S KC847S |
Low collector-emitter saturation voltage
|
TY Semiconductor Co., Ltd
|
| SMBT2222AE6327HTSA1 |
Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
| DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| SMBTA5607 |
PNP Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| SMBTA06 SMBTA0607 |
NPN Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| SMBT390608 MMBT3906 SMBT3906S SMBT3906U |
High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
