| PART |
Description |
Maker |
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| CDBU0320-HF CDBU0340-HF CDBU0330-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=0.35A
Halogen Free Schottky Barrier Diodes, V-RRM=40V, V-R=40V, I-O=0.35A
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=30V, I-O=0.35A
|
Comchip Technology
|
| STD35NF3LLT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 35A条（丁）|52AA
|
STMicroelectronics N.V.
|
| IRF7458 IRF7458TR |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
Power MOSFET(Vdss=30V/ Rds(on)max=8.0mohm/ Id=14A)
|
IRF[International Rectifier]
|
| ZXMN3A01 ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC |
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 35A-ifsm 0.875V-vf 25ns 2uA-ir DO-41 5K/REEL-13
30V N-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
|
| RJJ0315DPA-15 |
-30V, -35A, 5.9mΩmax. P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRFP3703 |
30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A?
|
International Rectifier
|
| FMC7G20US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| DTB743EE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTD743EE DTD743EM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB743ZM DTB743ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
