| PART |
Description |
Maker |
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010N |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRF7342QPBF10 IRF7342QTRPBF |
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRF7317PBF IRF7317TRPBF |
Generation V Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRF7402PBF IRF7402TRPBF IRF7402PBF-15 |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Generation V Technology
|
International Rectifier
|
| C3M0065100K |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
|
Wolfspeed
|
| C3M0065100J |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| C2M0045170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
| IRF7307PBF IRF7307TRPBF IRF7307PBF-15 |
HEXFET? Power MOSFET
HEXFET POWER MOSFET
5.2 A, 20 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
GENERATION V TECHNOLOGY
|
International Rectifier
|
| IRLR7821PBF IRLU7821PBF IRLR7821PF IRLR7821PBF-15 |
Ultra-Low Gate Impedance
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
High Frequency Synchronous Buck
|
International Rectifier
|
