| PART |
Description |
Maker |
| T1G4003532-FL-15 T1G4003532-FS T1G4003532-FL-EVB1 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G3000532-SM T1G3000532-SMEVB T1G3000532-SM-15 |
5W, 32V, 0.03 ?3.5 GHz, GaN RF Input-Matched Transistor
|
TriQuint Semiconductor
|
| RFHA3942 |
35W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| RFHA3942D |
35W Linear GaN on SiC Power Amplifier Die
|
RF Micro Devices
|
| TGA2612 TGA2612-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2612-SM-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
| CGHV1J070D |
70 W, 18.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| CMPA801B025F-AMP CMPA801B025F-TB CMPA801B025P |
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2060025D |
25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| STK4161V |
AF Power Amplifier (Split Power Supply) (35W 35W min, THD = 0.08%)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
|
