| PART |
Description |
Maker |
| TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| MLED930 |
Infrared LED 3.68 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
http://
|
| TLN115A07 TLN115AF TLN115A |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| TLN105B07 TLN105BF |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Corporation
Toshiba Semiconductor
|
| VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm
2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| FRS5XX |
850nm & 940nm Infrared LED Module Each LED watts: 0.06W
|
OptoSupply International
|
