| PART |
Description |
Maker |
| OH10018 |
Gallium Arsenide Devices
|
Panasonic
|
| OH10011 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01010 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01063B |
Gallium Arsenide Devices
|
Panasonic
|
| GN01067B |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0241 |
Gallium Arsenide Devices
|
Panasonic
|
| OH10024 |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0184 |
Gallium Arsenide Devices
|
Panasonic
|
| DGSS10-06CC |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS, Corp.
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
|
