PART |
Description |
Maker |
SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30 SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
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BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL SIPMOS Power Transistor
|
Infineon Technologies AG
|
SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05 |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
AM2300N |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
AM2308NE |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
AM2305P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
AM3455P |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
AM2342NE |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
SPU09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK RDSon = 0.25
|
Infineon
|
PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
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