PART |
Description |
Maker |
TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
HMC999 HMC999-12 |
GaN MMIC 10 WATT POWER AMPLIFIER
|
Hittite Microwave Corpo...
|
HMC999 |
GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz
|
Hittite Microwave Corporation
|
SLD-2083CZ |
12 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com SIRENZA[SIRENZA MICRODEVICES]
|
SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
SIRENZA[SIRENZA MICRODEVICES]
|
MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN Complementary Silicon Power Transistors Power 10A 250V Discrete PNP
|
ON Semiconductor
|
30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 800V 3A Ultra-Fast Discrete Diode in a SMC package 400V 3A Ultra-Fast Discrete Diode in a SMC package 600V 3A Ultra-Fast Discrete Diode in a SMC package 100V 3A Ultra-Fast Discrete Diode in a SMC package 200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp. IRF[International Rectifier] VISHAY SEMICONDUCTORS
|
T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
13522-100 13522-102 13522-1R0 13522-R005 13522-R00 |
PRECISION POWER WIREWOUND RESISTORS SILICONE COATED 1/2 WATT TO 50 WATT
|
RCD COMPONENTS INC.
|
CG2H40025 CG2H40025F CG2H40025P |
25 W, 28 V RF Power GaN HEMT
|
Cree, Inc
|
A3G18H500-04S A3G18H500-04SR3 |
RF Power GaN Transistor
|
NXP Semiconductors
|