| PART |
Description |
Maker |
| HMT451S6MMP8C-G7 HMT451S6MMP8C-S6 HMT451S6MMR8C-G7 |
204pin DDR3 SDRAM SODIMM
512M X 64 DDR DRAM MODULE, DMA204 LEAD FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
|
| M470T6464AZ3 M470T5669AZ0-CLE6_D5_CC M470T2864AZ3- |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| HMT112S6TFR8C-G7 HMT112S6TFR8C-H9 HMT125S6TFR8C-G7 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| HMT312S6BFR6C-G7 HMT325S6BFR6C-G7 HMT312S6BFR6C-H9 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| M470L6423EN0-CLB3 M470L6423EN M470L6423EN0-A2 M470 |
512MB Unbuffered SODIMM(based on sTSOP)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V43648Y04VCTG-75 |
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| UG42W6414GSG UG42W6446GSG UG42W6416GSG |
16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
http://
ETC[ETC]
|
| V43648Y04VCTG-10PC |
3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| V436516Y04VATG-75PC V436516Y04V V436516Y04VATG-10P |
ER 7C 7#8 SKT RECP BOX
128MB 144-PIN UNBUFFERED SDRAM SODIMM, 16MX64 3.3VOLT
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| VL-MM9-2EBN |
2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
|
List of Unclassifed Manufacturers
|
