| PART |
Description |
Maker |
| CSA916LA |
0.750W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 0.050A Ic, 50 - hFE
|
Continental Device India Limited
|
| CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| ZXTN5551FLTA ZXTN5551FL |
160V, SOT23, NPN High voltage transistor
|
Diodes Incorporated
Zetex Semiconductors
|
| ZXTN5551GTA ZXTN5551GTC ZXTN5551G |
160V, SOT223, NPN high voltage transistor
|
Diodes Incorporated
Zetex Semiconductors
|
| 2SD1821 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
| 2SA1200 |
High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SA812 |
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
|
TY Semiconductor Co., Ltd
|
| 2SC4116 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max).
|
TY Semiconductor Co., Ltd
|
| KTC4372 |
High Voltage: VCEO=150V
|
TY Semiconductor Co., L...
|
| 2SA1768 2SC4612 2SC4612R 2SC4612T |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK
High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SA1832 |
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400
|
TY Semiconductor Co., Ltd
|
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
