| PART |
Description |
Maker |
| BCM847DS BCM847BS BCM847BV BCM847BV115 |
NPN/NPN matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN matched double transistors
|
NXP Semiconductors N.V.
|
| PUMH20 PEMH20 PUMH20115 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=2.2千欧姆，R2=47千欧
|
NXP Semiconductors N.V.
|
| PEMH14 PUMH14 5C H1- H1P H1T H1W |
NPN/NPN resistor-equipped transistors R1 = 47 kohm, R2 = open NPN/NPN配电阻型晶体管；R1=47千欧姆，R2=开
NPN/NPN resistor-equipped transistors R1 = 47 kW-ohm, R2 = open
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| ZDT1048TA ZDT104807 ZDT1048 ZDT1048-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
SM-8 Dual NPN medium power high gain transistors
|
Diodes Incorporated
Zetex Semiconductors
|
| 2N5551 2N5551RLRA 2N5551RLRM 2N5551RLRP 2N55551ZL1 |
Small Signal Amplifier NPN
mplifier Transistors(NPN Silicon)
Amplifier Transistors
|
ONSEMI[ON Semiconductor]
http://
|
| MJW16110 MJ16110 ON1988 |
POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE
From old datasheet system
NPN Silicon Power Transistors
|
Motorola Mobility Holdings, Inc.
http://
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| PDTC114YEF PDTC114YT |
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm NPN配电阻型晶体R1=10千欧姆，R2=47千欧
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
NPN resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors
; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Power Bipolar Transistors
Complementary Power Transistors
|
ON Semiconductor
http://
|
