| PART |
Description |
Maker |
| ST2301SRG ST2301A |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST3401SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3422A |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IRF7530TR |
Trench Technology
|
International Rectifier
|
| AOT10T60P |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
| 10-FZ122PA150SC-P990F08 10-F0122PA150SC-P990F09 |
Trench Fieldstop IGBT technology
|
Vincotech
|
