| PART |
Description |
Maker |
| IRFSL5615PBF IRFS5615PBF IRFS5615PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| IRFB4020PBF-15 |
Key parameters optimized for Class-D audio amplifier applications
Key parameters optimized for Class-D audio amplifier applications
|
International Rectifier
|
| IRFB5615PBF |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 |
From old datasheet system
CONN HEADER 20POS DL PCB 30GOLD
Key Timing Parameters 关键的定时参
CONN HEADER 18POS DL PCB 30GOLD 关键的定时参
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 0480062111 48006-2111 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Brass Latch, Blue Housing, Phosphor Bronze Terminals, Single Key, with Beveled Metal Pins,2.5V Voltage Key
MOLEX Connector
|
Molex Electronics Ltd.
|
| RLDB808-500-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI4378DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| VCO-108TC |
Nominal Operating Parameters
|
RF Micro Devices
|
| SI7415DN-RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI4856ADY-RC |
R-C Thermal Model Parameters
|
VAISH[Vaishali Semiconductor]
|
