| PART |
Description |
Maker |
| IFS75B12N3T4B31 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
| PTVA123501EFC-15 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| IDP08E65D2 |
High Power RF LDMOS FETs
Qualified according to JEDEC for target applications
|
Infineon Technologies AG
Infineon Technologies A...
|
| PTFA241301E PTFA241301F PTFA241301FV1 |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz
|
Infineon Technologies AG
Infineon Technologies A...
|
| PTFA092211EL PTFA092211FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 ?960 MHz
|
Infineon Technologies AG
|
| PTFA092213EL PTFA092213FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
|
Infineon Technologies AG
|
| PTFB191501E PTFB191501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| PTFA041501E PTFA041501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
|
Infineon Technologies AG
|
| PTFA071701E PTFA071701F |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 鈥?770 MHz
|
Infineon Technologies AG
|
| PTFA212401E PTFA212401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFA192401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| PTFB211503ELV1R0XTMA1 PTFB211503FLV2R0XTMA1 PTFB21 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
