PART |
Description |
Maker |
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
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NXP Semiconductors N.V.
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BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
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NXP Semiconductors N.V.
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BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
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NXP Semiconductors N.V.
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LK822-14 |
RF POWER LDMOS TRANSISTOR
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Polyfet RF Devices
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L88016-14 |
RF POWER LDMOS TRANSISTOR
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Polyfet RF Devices
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BLF7G22L-200 BLF7G22LS-200 |
Power LDMOS transistor
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NXP Semiconductors
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BLF7G20L-200 |
Power LDMOS transistor
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Philips Semiconductors
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BLP05H635XR-15 |
Power LDMOS transistor
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NXP Semiconductors
|
BLP15M7160P |
Power LDMOS transistor
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NXP Semiconductors
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BLA6G1011-200R |
Power LDMOS transistor
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NXP Semiconductors
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