| PART |
Description |
Maker |
| BSM25GAL100D BSM25GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 25A I(C)
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C)
|
|
| VDI125-12S4 VII125-12S4 VID125-12S4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 125A条一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 125A条一（c
|
IXYS, Corp.
|
| CM600HA-24H |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,600A I(C)
|
Mitsubishi
|
| FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter
IGBT Power Module
|
eupec GmbH
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IRGRDN400K06 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 520A I(C) 晶体管| IGBT功率模块|独立| 600V的五（巴西）国际消费电子展| 520A一（c
|
Diodes, Inc.
|
| CM10MD24H |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 20A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展|甲一（c
|
ITT, Corp.
|
| CM100TF12E |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 100号A一（c
|
KOA Speer Electronics,Inc.
|
| VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Aimtec
|
| CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Toshiba, Corp.
|
| CM50DY28 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 1.4KV五（巴西）国际消费电子展| 50A条一（c
|
Mitsubishi Electric, Corp.
|
