| PART |
Description |
Maker |
| 444CNQ040 |
SCHOTTKY RECTIFIER
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectroni...
|
| MBR830 MBR860 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
|
| MBR1545CG |
Guard ring die constuction for transient protection
|
Kersemi Electronic Co., Ltd.
|
| MBR0540W |
Low forward voltage drop, Guard ring construction forTransient protection
|
TY Semiconductor Co., L...
|
| BAT54AW BAT54SW BAT54CW |
Low forward voltage Guard ring protected Very small SMD package.
|
TY Semiconductor Co., Ltd
|
| W4E350-DN02-39 |
SC axial fan sickled blades (S series) Wall ring with guard grille
|
ebm-papst
|
| BAT74S |
Low forward voltage Guard ring protected Small SMD package.
|
TY Semiconductor Co., Ltd
|
| BAS85 |
Low forward voltage High breakdown voltage Guard ring protected
|
TY Semiconductor Co., Ltd
|
| SB20100 |
Guard Ring Die Construction for Transient Protection
|
Sangdest Microelectroni...
|
| BYQ30E BYQ30E-150 BYQ30E-200 BYQ30EB-150 BYQ30EB-2 |
Ultra low drop voltage regulators compatible with low ESR inhibit output capacitors 整流二极管超快。崎
Rectifier diodes ultrafast, rugged 8 A, 150 V, SILICON, RECTIFIER DIODE
Rectifier diodes ultrafast, rugged 8 A, 200 V, SILICON, RECTIFIER DIODE
SERVSELECT PS/2 30FT CPU CABLE
Rectifier diodes ultrafast, rugged(超快速、强化的整流器二极管)
Rectifier diodes ultrafast/ rugged
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
