PART |
Description |
Maker |
APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
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Advanced Power Technology Ltd.
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APT30GT60AR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 40A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
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Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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APT15GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 31A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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STD7NM50N-1 STP7NM50N STF7NM50N STD7NM50N |
N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET N-channel 500V - 0.70楼? - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh垄芒 Power MOSFET N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
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STMicroelectronics
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APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 23A 0.450 Ohm
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Advanced Power Technology Ltd.
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APT6013B2FLL APT6013LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 43A 0.130 Ohm
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Advanced Power Technology, Ltd.
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APT10043 APT10043JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 1000V 22A 0.430 Ohm
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Advanced Power Technolo... Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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APT20GT60BR |
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
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ADPOW[Advanced Power Technology]
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APT30M36B2LL APT30M36LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 300V 84A 0.036 Ohm
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Advanced Power Technology Ltd.
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