| PART |
Description |
Maker |
| TLN107A E006145 |
INFRARED LED GaAS INFRARED EMITTER
From old datasheet system
INFRARED LED FOR PHOTO INTERRUTER
|
TOSHIBA[Toshiba Semiconductor]
|
| SID1050CM SID1050M |
Infrared LED Lamp
5PHI ROUND INFRARED LED (DIRECT MOUNT)
|
Sanken electric
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation
Toshiba Semiconductor
|
| TLP818 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR
TOSHIBA PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR
PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BIR-BO18V4V-2 BIR-BO18E4G-2 BIR-BN08E4G-2 |
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
