| PART |
Description |
Maker |
| KTA1660 |
High Voltage: VCEO=-150V
|
TY Semiconductor Co., Ltd
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2SA1412-Z |
High Voltage: VCEO=-400V High speed:tr 0.7ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2N5401AI |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE
|
Continental Device India Limited
|
| 2SB1220 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
| KTC4373 |
High Voltage: VCEO=120V
|
TY Semiconductor Co., L...
|
| 2SC5161 |
High breakdown voltage.VCEO = 400V NPN silicon transistor
|
TY Semiconductor Co., Ltd
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| 2SC3515 |
High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.5V (max)
|
TY Semiconductor Co., L...
|
| CTN391 |
0.750W High Voltage NPN Plastic Leaded Transistor. 200V Vceo, 0.500A Ic, 25 hFE.
|
Continental Device India Limited
|
| CP756 |
0.750W High Voltage PNP Plastic Leaded Transistor. 200V Vceo, 0.500A Ic, 40 hFE.
|
Continental Device India Limited
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
