PART |
Description |
Maker |
NTE5374 NTE5375 |
Silicon Controlled Rectifier (SCR) for High Speed Switching
|
NTE[NTE Electronics]
|
2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6 |
Silicon Controlled Rectifier 16A 400V Darlington Transistors NPN Silicon Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS
|
ONSEMI[ON Semiconductor]
|
S6785G |
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED SWITCHING AND CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
V965ME07-LF |
Voltage-Controlled Oscillator High Speed Digital Clocks
|
Z-Communications, Inc
|
RUR-D820 RUR-D815 RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V. Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 150 V. Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V.
|
General Electric Solid State
|
2SK3748 |
N CHANNEL MOS SILICON TRANSISTOR High-Voltage High-Speed Switching Applications High-Voltage, High-Speed Switching Applications From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
MCR310-010 MCR310-D |
Silicon Controlled Rectifier 10A 800V Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
|
ON Semiconductor
|
KSC2335F KSC2335 |
High Speed/ High Voltage Switching High Speed, High Voltage Switching NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
IRKT41-04 IRKT41-10 IRKT41-14 IRKT41-12 IRKT41-06 |
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1000 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
|
Vishay Semiconductors
|
BSP280 Q67000-S279 |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|