| PART |
Description |
Maker |
| T0980NBSP T0980 |
SiGe front end for FRS family radio
From old datasheet system
|
Atmel Corp
|
| Q62702-B673 BB914 |
Silicon Variable Capacitance Diode (For FM radio tuner with extended frequency band High tuning ratio low supply voltage car radio)
From old datasheet system
|
Siemens Group
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| NESG2101M16-T3-A NESG2101M16 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| HSG2004 HSG2004TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| HSG2005 HSG2005TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| UMA1018M UMA1018M-T |
PLL FREQUENCY SYNTHESIZER, 1250 MHz, PDSO20
Low-voltage dual frequency synthesizer for radio telephones
|
NXP Semiconductors
|
| NBSG14 |
2.5V/3.3VSiGe Differential 1:4 Clock/Data Driver with RSECL* Outputs(B>RSECL输出.5V/3.3VSiGe，差:4时钟/数据驱动
|
ON Semiconductor
|
| JDP4P02AT |
Radio-frequency switching diode
|
TOSHIBA
|
| HPTM1CL-312 HPTM1CR-312 HPTM1CR-438 HPKTM1CR-312 7 |
RFID (Radio Frequency Identification)
|
Tyco Electronics
|
| 1SS314 |
Radio-frequency switching diode
|
Toshiba, Corp.
|
