PART |
Description |
Maker |
19023-0012 19025-0004 19022-0010 19022-0006 19023- |
.250X.032 MALE QD INSULKRIMP (MCT-2X) 2 mm2, TAB TERMINAL 190250004 0.8 mm2, TAB TERMINAL .250 X .032 MALE QD KRIMP/TAPE (AMCT-1T) 0.8 mm2, TAB TERMINAL .187 X .020 MALE QD KRIMPTITE (AMCT-17) 0.8 mm2, TAB TERMINAL .187X.020 MALE QD INSULKRIMP (MCT-27X) 2 mm2, TAB TERMINAL .250X.032 MALE QD AVIK. TAPED (CMCT-5T) 5 mm2, TAB TERMINAL .187X.020 MALE QD KRIMP.TAPED (MCT-17T) 2 mm2, TAB TERMINAL .250X.032 MALE QD AVIKRIMP (MCT-5)
|
Molex, Inc. MOLEX INC
|
MCT3D65P100F2 MCT3A65P100F2 |
65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) DIODE ZENER SINGLE 500mW 3.9Vz 5mA-Izt 0.05 3uA-Ir 1 PowerDI-323 3K/REEL 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
2N5207 |
MAXIMUM ALLOWABLE RATINGS MAXIMUM ALLOWABLE RATINGS
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
2N5204 |
MAXIMUM ALLOWABLE RATINGS MAXIMUM ALLOWABLE RATINGS
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
MCTV75P60E1 MCTA75P60E1 |
75A / 600V P-Type MOS Controlled Thyristor (MCT) 75A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
MCTG35P60F1 |
35A / 600V P-Type MOS Controlled Thyristor (MCT) 35A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
C3757-02 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Photonics
|
C4159 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Corporation
|
C3757-02 C5185 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Corporation
|
P3257-30 P3257-31 P2750-06 P2750-08 P325707 P3981- |
MCT photoconductive detector Non-cooled type and TE-cooled type suitable for long, continuous operation
|
Hamamatsu Corporation
|
P9697 |
MCT photovoltaic detector Photovoltaic detector with high-speed response and low noise
|
Hamamatsu Corporation
|