| PART |
Description |
Maker |
| MSE20N06N |
Low RDS(on) trench technology
|
Bruckewell Technology L...
|
| AM3444N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG315N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| SIGC06T60GS |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology; low threshold voltage
|
Infineon
|
| IKW75N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
| IKW50N60T Q67040S4718 |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
| IGW40T120 Q67040-S4519 GW40T120 |
From old datasheet system
Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 40A 1200V TO247 IGBT
|
INFINEON[Infineon Technologies AG]
|
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
