| PART |
Description |
Maker |
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
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Sanken Electric Co.,Ltd.
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| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
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NEC, Corp.
NEC[NEC]
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| MPAT-584643-10151MS MPAT-584643-10153FS MPAT-58464 |
5845 MHz - 6430 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
950 MHz - 1450 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
14000 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
10.95 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
13750 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
11700 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
3800 MHz - 4100 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.3 dB INSERTION LOSS-MAX
17300 MHz - 17800 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.7 dB INSERTION LOSS-MAX
2000 MHz - 2200 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
1275 MHz - 1480 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
4000 MHz - 8000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2 dB INSERTION LOSS-MAX
3100 MHz - 3500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
8000 MHz - 12000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
18800 MHz - 19600 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
950 MHz - 1750 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
6400 MHz - 7200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
10700 MHz - 11700 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
MITEQ INC
|
| FAN2500_FAN2501 FAN2501S25 FAN2501S28 FAN2500X25 F |
Pch Power MOSFET; ; Package: TPS; R DS On (Ω): (max 0.2) (max 0.12); I_S (A): (max -5)
Pch Power MOSFET; Surface Mount Type: N; Package: PW-MINI; R DS On (Ω): (max 0.76) (max 0.45); I_S (A): (max -2)
From old datasheet system
100 mA CMOS LDO Regulators
|
Fairchild Semiconductor
|
| 1MB20-060 |
Potentiometer; Resistance Max:10kohm; Resistance Tolerance: /- 20 %; Power Rating:0.05W; Voltage Rating:50 VAC, 20VDC; Series:PTV111
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| SSTVN16857MTD SSTV16857 SSTV16857MTD SSTVN16857 |
Voltage Regulator IC; Output Current:300mA; Output Voltage:5V; Package/Case:8-MSOP; Supply Voltage Max:6V; Current Rating:300mA; Leaded Process Compatible:No; Output Current Max:300mA; Output Voltage Max:5V
14-Bit Register with SSTL-2 Compatible I/O and Reset
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 2317-H-RC 2318-H-RC 2315-H-RC 2301-H-RC 2307-V-RC |
Toroidal Inductor; Series:2300; Inductance:270uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:5.5A; DC Resistance Max:0.060ohm; Leaded Process Compatible:Yes 1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2300; Inductance:330uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:5.2A; DC Resistance Max:0.067ohm; Leaded Process Compatible:Yes 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2300; Inductance:180uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:4.8A; DC Resistance Max:0.078ohm; Leaded Process Compatible:Yes 1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2300; Inductance:10uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:20A; DC Resistance Max:0.005ohm; Leaded Process Compatible:Yes 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2300; Inductance:33uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:11.7A; DC Resistance Max:0.013ohm; Leaded Process Compatible:Yes 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR
High Current Toroid Inductors Horizontal or vertical mount
|
Bourns, Inc.
Bourns Electronic Solutions
Bourns Electronic Solut...
|
| 1140-4R7M-RC 1140-101K-RC 1140-3R3M-RC 1140-681K-R |
RF Choke; Series:1140; Inductance:4.7uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:100uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:14.4A; DC Resistance Max:0.025ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:3.3uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:680uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:7.2A; DC Resistance Max:0.139ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:470uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:7.2A; DC Resistance Max:0.114ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
Very high current capacity Low DCR
RF Choke; Series:1140; Inductance:82uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:14.4A; DC Resistance Max:0.023ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:2.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.002ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
|
BOURNS INC
Bourns Electronic Solutions
|
| HDF1205S HDF2415D HDF2412D HDF2412S HDF1215S HDF24 |
NTE Silicon General Purpose Amplifier, Type: NPN
Thermal Fuse; Current Rating:15A; Opening Temperature:240 C; Fuse Terminals:Axial Lead; Voltage Rating:277V; Fuse Size/Group:3.22 "; Voltage Rating:277V RoHS Compliant: Yes 3瓦特HD系列
3 Watt HD Series 3瓦特HD系列
Waveform Generator; IC Function:Waveform Generator IC; Package/Case:14-DIP; Supply Current:15mA; Supply Voltage:36V; Supply Voltage Max:30V; Supply Voltage Min:10V; Frequency Max:200kHz
Audio Power Amplifier IC; Output Power, Po:325mW; Load Impedance Min:8ohm; Supply Voltage Max:12V; Supply Voltage Min:4V; Package/Case:8-DIP; Amplifier Type:; Bias Current:250nA; Number of Amplifiers:1; Offset Voltage:50kV
IC-QUAD COMPARATOR
Operational Amplifier (Op-Amp) IC; Number of Amplifiers:2; Bandwidth Max:4MHz; Slew Rate:13V/us; Package/Case:8-DIP; Dual Supply Voltage Max ( /- V):18V; Mounting Type:Through Hole
Operational Amplifier (Op-Amp) IC; No. of Amplifiers:1; Amplifier Type:; Slew Rate:13V/us; Bandwidth Max:4MHz; Bias Current:7nA; Dual Supply Voltage Max ( V):18V; Gain:4dB; Offset Voltage:13mV; Package/Case:8-DIP RoHS Compliant: Yes
IC-QUAD JFET INPUT OP AMP
|
Shindengen Electric Manufacturing Co., Ltd.
Shindengen Electric Manufacturing Company, Ltd.
Shindengen Electric Mfg. Co., Ltd.
|
| BC328-16/E6 BC328/E6 BC328-40/E6 BC327/E6 BC327-40 |
IC MAX 7000 CPLD 64 100-TQFP
MAX II CPLD 570 LE 256-FBGA
MAX II CPLD 570 LE 100-TQFP
MAX 7000 CPLD 192 MC 160-PQFP
MAX 7000 CPLD 32 MC 44-TQFP
MAX 3000A CPLD 32 MC 44-TQFP
MAX 7000 CPLD 256 MC 100-FBGA 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 800mA的一（c）|26AA
800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
|
Mitsubishi Electric, Corp.
VISHAY SEMICONDUCTORS
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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NXP SEMICONDUCTORS
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