| PART |
Description |
Maker |
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
| IRLML2402GTRPBF |
Generation V Technology
|
International Rectifier
|
| IRF7306PBF |
GENERATION V TECHNOLOGY
|
International Rectifier
|
| IRF7311PBF IRF7311PBF-15 |
GENERATION V TECHNOLOGY
|
International Rectifier
|
| IRF7389PBF IRF7389TRPBF IRF7389PBF-15 |
HEXFET Power MOSFET
Generation V Technology
|
IRF
International Rectifier
|
| IDT8T49N008I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRF7413GTRPBF IRF7413GPBF |
Generation V Technology
Ultra Low On-Resistance
|
International Rectifier
|
| IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel
generation v technology
|
International Rectifier
|
| KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
| KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SKB06N60HS SKB06N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
