PART |
Description |
Maker |
SDR2HF1.81 SDR2HF1.8SMS SDR2HF2.0SMS |
2 AMPS 1800 - 2000 VOLTS 35 nsec HYPER FAST RECOVERY RECTIFIER 2 A, 1800 V, SILICON, RECTIFIER DIODE 2 AMPS 1800 - 2000 VOLTS 35 nsec HYPER FAST RECOVERY RECTIFIER 2 A, 2000 V, SILICON, RECTIFIER DIODE
|
http:// Solid State Devices, Inc.
|
IRKD320-20 |
320 A, 2000 V, SILICON, RECTIFIER DIODE
|
VISHAY INTERTECHNOLOGY INC
|
MA4EXP190H-1225T MA4EXP190H-1225 |
Silicon Double Balanced HMIC Mixer, 2000 - 2300 MHz
|
MACOM[Tyco Electronics]
|
FR1ZZ FR1Q FR1V FR1Y FR1Z |
1 Amp Fast Recovery Silicon Rectifier 1200 to 2000 Volts
|
MCC[Micro Commercial Components]
|
AP77016-B04 |
uSAP77016-B04 G.723.1 Audio CODEC Middleware | User's Manual[10/2000] uSAP77016B04 g.723.1使用音频CODEC中间件|用户手册[10/2000]
|
Glenair, Inc.
|
MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217 |
MEDIUM POWER TMOS FET 700 mA 240 VOLTS 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA N-hannel Enhancement-ode Logic Level SOT23 From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
ER1ZZ ER1Q ER1V ER1Y ER1Z |
1 Amp Super Fast Recovery Silicon Rectifier 1200 to 2000 Volts
|
MCC[Micro Commercial Components]
|
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor 25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz BJT 2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology Microsemi, Corp.
|
S1ZZ-TP |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
|
Micro Commercial Components, Corp.
|