| PART |
Description |
Maker |
| HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| M312L6523BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA |
64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
26615150 DDR SDRAM的注册模
DDR SDRAM Registered Module
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H5PS1G63EFR-C4I H5PS1G63EFR-E3C H5PS1G63EFR-G7Q H5 |
1Gb DDR2 SDRAM
64M X 16 DDR DRAM, 0.35 ns, PBGA84
64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84
256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| V59C1256804QALP19E V59C1256808QALP19E V59C1G01164Q |
32M X 8 DDR DRAM, BGA68
64M X 16 DDR DRAM, BGA92
|
PROMOS TECHNOLOGIES INC
|
| HYB18M1G16 HYB18M1G160BF-7.5 HYE18M1G161BF-7.5 HYE |
1-Gbit x16 DDR Mobile-RAM 64M X 16 DDR DRAM, 5.5 ns, PBGA60
|
Qimonda AG
http://
|
| HYMD525G726CFP4-D43 HYMD525G726CFP4-J HYMD512G726C |
64M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
184pin Registered DDR SDRAM DIMMs
|
Hynix Semiconductor, Inc.
http://
|
| H5PS1G63EFR-C4I H5PS1G63EFR-S5C |
64M X 16 DDR DRAM, 0.5 ns, PBGA84
64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU56422BT-D43 |
64M X 4 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU56422DF-H HY5DU56422DF-K |
64M X 4 DDR DRAM, 0.75 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| HYS64T64900EU-3.7-B2 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
|
QIMONDA AG
|
