| PART |
Description |
Maker |
| IRG4MC40U |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
|
International Rectifier, Corp.
|
| OM5007ST OM5005ST OM5006ST OM5002ST OM5001ST OM500 |
15 Amp, 50 To 600 Volts, 35 To 50 ns trr
100V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package
15 AMP ULTRA FAST RECTIFIER IN SMALL HERMETIC PACKAGE
600V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package
150V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package
|
IRF[International Rectifier]
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| IRG4PC40 IRG4PC40F IRG4PC40F-EPBF |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
49 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier]
Vishay Intertechnology, Inc.
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
| IRGMH40F |
1200V DISCRETE Hi-Rel IGBT in a TO-254AA package
|
International Rectifier
|
| IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
|
IRF[International Rectifier]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRGIH50F |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRGVH50F |
INSULATED GATE BIPOLAR TRANSISTOR
1200V DISCRETE Hi-Rel IGBT in a TO-258AA package
|
International Rectifier
|
| IRGBC20S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
