| PART |
Description |
Maker |
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| TLP70107 TLP701 |
IGBT/Power MOS FET gate drive
|
Toshiba Semiconductor
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| TLP350 |
Inverter for Air Conditioner, IGBT/Power MOS FET Gate Drive, Industrial Inverter
Photocouplers - Photo-IC Output
|
Toshiba Semiconductor
|
| 8810 |
N-channel power MOS field effect tube
|
SHENZHEN FUMAN ELECTRON...
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT5020BLC APT5020SLC |
POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| HCPL-3101 HCPL-3100 |
Power MOSFET/IGBT Gate Drive Optocouplers(功率 MOSFET/IGBT门驱动耦合 功率MOSFET / IGBT栅极驱动光电耦合器（功率MOSFET IGBT的门驱动耦合器）
Power MOSFET-IGBT Gate Drive Optocouplers
|
Agilent / Hewlett-Packard
|
| APT35GP120B2DF2 |
Power MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
