| PART |
Description |
Maker |
| BGA461 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies A...
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| SGL-0622Z |
100 - 4000 MHz Low Noise Amplifier Silicon Germanium
|
SIRENZA MICRODEVICES
|
| BGA924N6 |
Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems
|
Infineon Technologies A...
|
| RQG1001UPAQF RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| RPM6937-V4 RPM6938-V4 |
Lead Frame Remote Control Receiver Modules (5V with superior anti-nois characteristics Type)
|
ROHM
|
| S1M8662AX01-F0T0 S1M8662A DSS1M8662A |
RX IF/BBA WITH GPS
RX IF / BBA WITH GPS
CDMA/PCS/GPS Triple Mode IF/ baseband IC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| BGA715N7 |
16/32-Bit Single-Chip Microcontroller
Silicon Germanium Low Noise Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| RXM-GPS-R4-T |
GPS Modules R4 Series GPS Recvr Module Tape and Reel
|
Linx Technologies, Inc.
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
