| PART |
Description |
Maker |
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET
|
Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
|
| IRF644B IRFS644B IRF644 IRF644BFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRF644 & IRF644A
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA62N25C |
250V N-Channel MOSFET 62 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
|
| FQAF16N25C |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS654 IRFS654B IRF654B IRF654 IRF654BFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRF654A
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FQI9N25 FQB9N25 FQB9N25TM |
250V N-Channel QFET
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOSFET) 9.4 A, 250 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQT2P25 FQT2P25TF |
250V P-Channel QFET
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
| FQD4P25TM FQD4P25TMWS |
P-Channel QFETMOSFET -250V, -3.1A, 2.1
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
| 2N6904 |
N-Channel Logic Level Power MOS Field-Effect Transistors
|
New Jersey Semi-Conduct...
|
| TPH1110FNH |
150V, 200V and 250V power MOSFET U-MOS VIII-H Series
Power MOSFET (N-ch 150V<VDSS≤250V)
|
Toshiba, Corp.
|
