PART |
Description |
Maker |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
UPC8120T-E3 UPC8131TA UPC8119T-E3 |
-15 dBm INPUT/ VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE Microwave/Millimeter Wave Amplifier
|
NEC Corp.
|
MGA-81563 |
0.1-6 GHz 3 V, 14 dBm Amplifier(0.1-6 GHz 3 V, 14 dBm 放大
|
Agilent(Hewlett-Packard)
|
CMM3566-LC-000T PB-CMM3566-LC |
3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3.45.5 GHz 7.0伏,24 dBm的的W - CDMA功率放大 3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3450 MHz - 3500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Mimix Broadband, Inc. MIMIX BROADBAND INC
|
MAX2056 MAX2056ETX-T MAX2056ETX |
From old datasheet system 800MHz to 1000MHz Variable-Gain Amplifier with Analog Gain Control
|
MAXIM[Maxim Integrated Products]
|
BAT54CT-7 BAT54T-7 BAT54AT BAT54ST BAT54ST-7 |
SURFACE MOUNT SCHOTTKY BARRIER DIODE 330MHz, Gain of 1/Gain of 2 Closed-Loop Buffers
|
Diodes Incorporated Diodes Inc.
|
ADL5541 |
50 MHz TO 6 GHz RF/IF GAIN BLOCK, GAIN OF 15 dB
|
Analog Devices
|
EL4452C EL4452CN EL4452CS |
Wideband Variable-Gain Amplifier with Gain of 10
|
ELANTEC[Elantec Semiconductor]
|