| PART |
Description |
Maker |
| KMM372V3280BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module
32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块)
x72 SDRAM Module x72内存模块
32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块）
|
IBM Microeletronics
DB Lectro, Inc.
International Business Machines, Corp.
|
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32005BG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MBM29DL323BE90PBT MBM29DL323BE90TN MBM29DL323BE90T |
2M X 16 FLASH 2.7V PROM, 120 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 80 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
TVS UNIDIRECT 600W 51V SMB 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
MICRO SINGLE MODE FIBER TRANCEIVER, ST 32M的（4米8/2M × 16）位双操
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
32M (4M x 8/2M x 16) BIT Dual Operation 32M的（4米8/2M × 16）位双操
KPT 6C 6#20 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 PORT MODULAR SWITCH ROHS VERSION
LE1416A BLANK FACE PLATE
4 PORT 100 MB SINGLE-MODEFIBER
XSNT SUPPR,ESD,060.00V,0603
MULTI-WAY IEC PANEL OUTLET
8 PORT MODULAR SWITCH
PCI 10BASE T/10 BASE FL NIC, S
TVS UNI-DIR 43V 600W SMB
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB |
OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
TVS BIDIRECT 600W 33V SMB 32M的（4米8/2M × 16）位双操
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11 |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作
NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited.
Fujitsu, Ltd.
FUJITSU LTD
|
| UPD29F032202ALGZ-B85BY-MJH UPD29F032202ALGZ-B85TY- |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flash memory
|
NEC
|
| UPD23C32000ALGY-XXX-MJH UPD23C32000ALGY-XXX-MKH UP |
32M-bit (4M-wordx8-bit/2M-wordx16-bit) Mask ROM
|
NEC
|
| UPD29F032204ALGZ-B85BX-MJH UPD29F032204ALGZ-B85TX- |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flashmemory
|
NEC
|
