| PART |
Description |
Maker |
| A25LQ64 |
64M-BIT (x1 / x2 / x4) 3.3V CMOS MXSMIO
|
AMIC Technology
|
| TC58V64AFTI |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| MX25L6402 MX25L6402MC-40 MX25L6402MC-40G |
64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
|
MCNIX[Macronix International]
|
| MX29LV640BUXBI-90G MX29LV640BU MX29LV640BUTC-12 MX |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX25U6435E |
64M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L6435E MX25L6435EM2I10G MX25L6435EMI10G MX25L6 |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L6436E MX25L6436EM2I10G MX25L6436EZNI10G |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25U6435F MX25U6435FM2I10G MX25U6435FZNI10G |
1.8V 64M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life
SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life
SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MX29LV065XBC-90 MX29LV065XBI-90 MX29LV065TC-90 MX2 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 120 ns, PDSO48
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
http://
|
| W966D6HBGX7I-TR |
This is a 64M bit CellularRAM?compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
|
Winbond
|
