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IRG4RC10UPBF - INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation    INSULATED GATE BIPOLAR TRANSISTOR

IRG4RC10UPBF_7887425.PDF Datasheet

 
Part No. IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   
File Size 647.10K  /  10 Page  

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International Rectifier



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Part: IRG4RC10U
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 Full text search : INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation    INSULATED GATE BIPOLAR TRANSISTOR
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