| PART |
Description |
Maker |
| GT40J322 |
IGBT for soft switching applications
|
TOSHIBA
|
| GT35J321 |
IGBT for soft switching applications
|
TOSHIBA
|
| IKW50N65ES5 |
high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
| 2SC5422 |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLIC
|
Toshiba Semiconductor
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5422 EE07952 |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY/ COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLIC
From old datasheet system
|
Toshiba Semiconductor
|
| IHW20T120 |
IGBTs & DuoPacks - 20A / 1200V IGBT and 9A / 1200V Diode in DuoPack
Soft Switching Series
|
INFINEON[Infineon Technologies AG]
|
| IKQ40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IRGP50B60PD1 |
SMPS IGBT
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF
International Rectifier
|
| IKW40N65ES5-15 |
high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
| IRG4PH40UD2-E IRG4PH40UD2-EPBF |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package
|
IRF[International Rectifier]
|
