| PART |
Description |
Maker |
| UPD65321 UPD65322 UPD65323 UPD65941GB-XXX-YEU UPD6 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD)
Channelless type CMOS gate array using 0.35um process
|
NEC
|
| UPA1601 UPA1601GS UPA1601CX |
Power MOS FET array
UPA1601DataSheet|DataSheet[03/1994]
MONOLITHIC POWER MOSFET ARRAY
|
NEC
|
| HER207 HER204 HER201 HER208G HER201G HER202 HER203 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 24高效玻璃钝化二极
24 HIGH EFFICIENCY GPP DIODES
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| EPF10K30EFC484-3DX EPF10K100BQC208-3DX EPF10K100BQ |
ASIC 专用集成电路
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列FPGA
|
TE Connectivity, Ltd.
DOMINANT Opto Technologies Sdn. Bhd.
Altera, Corp.
Vectron International, Inc.
Cypress Semiconductor Corp.
PATLITE, Corp.
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| XC4013E-1BG225C XC4010E-2BG225C XC4005E-4PQ100I XC |
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 576 CLBS, 10000 GATES, 166 MHz, PBGA225
10000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 400 CLBS, 7000 GATES, 125 MHz, PBGA225
5000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
FPGA, 100 CLBS, 2000 GATES, 125 MHz, PQFP100
FPGA, 400 CLBS, 7000 GATES, 125 MHz, PQFP208
|
Xilinx, Inc.
XILINX INC
|
| XC3000 XC3000A XC3000L XC3020A-7PQ100C XC3030A XC3 |
Description:
XC3000 Field Programmable Gate Array
Field Programmable Gate Arrays (XC3000A/L, XC3100A/L)
|
XILINX[Xilinx, Inc]
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
| APT5015BLC |
POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| UPD65810GD-047-LML |
CMOS Gate Array
|
ETC
|
| CXD8932Q |
CMOS Gate Array
|
ETC
|
