PART |
Description |
Maker |
Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
IRF7329PBF IRF7329TRPBF IRF7329PBF-15 |
HEXFET Power MOSFET Ultra Low On-Resistance Trench Technology
|
IRF[International Rectifier]
|
AM3446N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
AUIRGPS4070D0 |
Low VCE (on) Trench IGBT Technology
|
Infineon Technologies A...
|
FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
KSM9Z24N |
Advanced high cell denity trench technology for ultra RDS
|
Kersemi Electronic Co.,...
|
SIGC04T60GS |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology; low threshold voltage
|
Infineon
|
IKW50N60T Q67040S4718 |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
IKW75N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|