| PART |
Description |
Maker |
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| VIO50-12P1 VII50-12P1 VDI50-12P1 VID50-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
From old datasheet system
|
IXYS[IXYS Corporation]
|
| VID50-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| VID25-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| VID25-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| MID100-12A3 MII100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| SEMIX202GB128DS08 |
SPT IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
http://
|
| SEMIX202GB066HDS08 |
Trench IGBT Modules 270 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX352GB128DS08 |
SPT IGBT Modules 370 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
