| PART |
Description |
Maker |
| SLD-1000 |
4 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| S2206 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6306 |
SiC Schottky Barrier Diode Bare Die
|
Rohm Co., Ltd.
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| S4108 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4105 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6202 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| 5SMX12K1273 |
IGBT-Die 75 A, 1200 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
ABB Semiconductors
|
| 5SMX12N4507 |
IGBT-Die 40 A, 4500 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
|
