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IPT0406-25F - High current density due to double mesa technology

IPT0406-25F_7846847.PDF Datasheet


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IPT0806-SEI High current density due to double mesa technology
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IPT1608-SEB High current density due to double mesa technology
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IPT1608-SEA High current density due to double mesa technology
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SET111411 SET111403 SET111412 SET111419 SET111404 High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度,大电3 -相全波桥式整流器(反向电000V的温5℃时平均整流电流45A条,高密度,大电流,三相全波桥整流器
HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
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ASPI-0630LR-R47 ASPI-0630LR-R82 ASPI-0630LR-R56 AS High saturation current. Low loss due to low DC resistance.
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ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10    3.3V In-System Programmable High Density SuperFAST?PLD
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44
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RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
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280 MHz 3.3V in-system prommable superFAST high density PLD
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
UH6PJ-E3/86A UH6PJ-E3/87A UH6PJ-M3/86A UH6PJ-M3/87 High Current Density Surface Mount Ultrafast High Voltage Rectifier
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