PART |
Description |
Maker |
RJK60S3DPP-E0 RJK60S3DPP-E0-T2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6015DPM-00T1 |
600V - 21A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJQ6020DPM |
600V - 20A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S7DPQ-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL60S5DPK-M0 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
|
NEC[NEC]
|
2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS type field effect transistor
|
NEC[NEC] Toshiba Semiconductor
|
2SK2112 D11232EJ2V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING From old datasheet system MOS Field Effect Transistor
|
NEC[NEC]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|