| PART |
Description |
Maker |
| BF998 BF998R |
Silicon N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 3SK103 |
Silicon N-Channel Dual Gate MOS FET
|
ETC
|
| BF981 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
NXP Semiconductors
|
| BF980A |
Silicon N-Channel dual gate MOSFET 硅N沟道双栅MOSFET
|
Electronic Theatre Controls, Inc.
|
| 3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK319YB-TL-E 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
| 3SK318 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 3SK22607 3SK226 |
Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications
|
Toshiba Semiconductor
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
| KK4012B KK4012BD KK4012BN |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
